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2SB707 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB707 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB707 2SB708 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB707 -60 V(BR)CEO Collector-emitter breakdown voltage 2SB708 IC=-10mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A;IB=-0.5 A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-3A ; VCE=-1V 40 200 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 hFE-2 classifications R O Y 40-80 60-120 100-200 |
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