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BU921 Datasheet(PDF) 2 Page - Savantic, Inc. |
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BU921 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU921 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 400 V VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=50mA 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=7 A;IB=140mA 1.8 V VBEsat-1 Base-emitter saturation voltage IC=5A;IB=50mA 2.2 V VBEsat-2 Base-emitter saturation voltage IC=7 A;IB=140mA 2.5 V ICES Collector cut-off current VCE=450V;VBE=0 TC=150 0.25 0.50 mA ICEO Collector cut-off current VCE=400V;IB=0 0.25 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 mA hFE DC current gain IC=2A; VEB=2V 500 VF Diode forward voltage IF=7A 2.5 V |
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