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BUJ403A Datasheet(PDF) 2 Page - Savantic, Inc. |
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BUJ403A Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUJ403A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0;L=25mH 550 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4 A 0.15 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4 A 0.91 1.5 V ICEO Collector cut-off current VCE =550V; IB=0; 0.1 mA ICES Collector cut-off current VCE =VCESMmax; VBE=0; Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1mA;VCE=5V 13 hFE-2 DC current gain IC=500mA;VCE=5V 20 47 hFEsat-1 DC current gain IC=2A;VCE=5V 13 25 hFEsat-2 DC current gain IC=3A;VCE=5V 15.5 Switching times resistive load ton Turn-on time 0.5 µs ts Storage time 3.0 µs tf Fall time IC=2.5A; IB1=-IB2=0.5 A RL=75D,VBB2=4V 0.3 µs |
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