This Data Sheet may be revised by subsequent versions

©2004 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

1

EN25LF10

Rev. B, Issue Date: 2008/06/23

FEATURES

• Single power supply operation

- Full voltage range: 2.35-3.6 volt

• 1 Mbit Serial Flash

- 1 M-bit/128 K-byte/512 pages

- 256 bytes per programmable page

• High performance

- 75MHz clock rate

• Low power consumption

- 5 mA typical active current

- 1

μA typical power down current

• Uniform Sector Architecture:

- 32 sectors of 4-Kbyte

- 4 blocks of 32-Kbyte

- Any sector or block can be

erased individually

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Page program time: 1.5ms typical

- Sector erase time: 150ms typical

- Block erase time 800ms typical

- Chip erase time: 2 Seconds typical

• Lockable 256 byte OTP security sector

• Minimum 100K endurance cycle

• Package Options

- 8 pins SOP 150mil body width

- 8 contact VDFN

- All Pb-free packages are RoHS compliant

• Industrial temperature Range

GENERAL DESCRIPTION

The EN25LF10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25LF10 is designed to allow either single Sector at a time or full chip erase operation. The

EN25LF10 can be configured to protect part of the memory as the software protected mode. The

device can sustain a minimum of 100K program/erase cycles on each sector.

EN25LF10

1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector