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2SB891F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB891F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 B -32 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.5 -0.8 V ICBO Collector cut-off current VCB=-20V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-0.5A ; VCE=-3V 82 390 fT Transition frequency IC=-0.5A ; VCE=-5V;f=30MHz 100 MHz COB Collector output capacitance IE=0; f=1MHz ; VCB=-10V 50 pF hFE-2 Classifications P Q R 82-180 120-270 180-390 2 |
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