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2SA1117 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SA1117 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SA1117 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-8A ; VCE=-4V 20 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz |
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