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2N4401 Datasheet(PDF) 1 Page - Dc Components |
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2N4401 Datasheet(HTML) 1 Page - Dc Components |
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1 / 1 page 2N4401 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR TO-92 Dimensions in inches and (millimeters) .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27) Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Description Designed for general purpose switching and amplifier applications. Pinning 1 = Emitter 2 = Base 3 = Collector Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V Collector Current IC 600 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 60 - - V IC=100 µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 40 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10 µA, IC=0 Collector Cutoff Current ICEX - - 0.1 µA VCE=35V, VBE=0.4V Collector-Emitter Saturation Voltage(1) VCE(sat)1 - - 0.4 V IC=150mA, IB=15mA VCE(sat)2 - - 0.75 V IC=500mA, IB=50mA Base-Emitter Saturation Voltage(1) VBE(sat)1 0.75 - 0.95 V IC=150mA, IB=15mA VBE(sat)2 - - 1.2 V IC=500mA, IB=50mA hFE1 20 - - - IC=0.1mA, VCE=1V hFE2 40 - - - IC=1mA, VCE=1V DC Current Gain(1) hFE3 80 - - - IC=10mA, VCE=1V hFE4 100 - 300 - IC=150mA, VCE=1V hFE5 40 - - - IC=500mA, VCE=2V Transition Frequency fT 250 - - MHz IC=20mA, VCE=10V, f=100MHz Output Capacitance Cob - - 6.5 pF VCB=5V, IE=0, f=1MHz Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% Rank A B Range 100~210 190~300 Classification of hFE4 |
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