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MPSA05 Datasheet(PDF) 1 Page - Dc Components |
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MPSA05 Datasheet(HTML) 1 Page - Dc Components |
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1 / 1 page MPSA05 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. Pinning 1 = Emitter 2 = Base 3 = Collector TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27) Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 4 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 60 - - V IC=100 µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 4 - - V IE=100 µA, IC=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=60V, IE=0 ICEO - - 0.1 µA VCE=60V, IB=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.25 V IC=100mA, IB=10mA Base-Emitter On Voltage(1) VBE(on) - - 1.2 V IC=100mA, VCE=1V DC Current Gain(1) hFE1 50 - - - IC=10mA, VCE=1V hFE2 50 - - - IC=100mA, VCE=1V Transition Frequency fT 100 - - MHz IC=10mA, VCE=2V, f=100MHz Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% |
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