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2SA1265N Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SA1265N Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SA1265N CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -140 V VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -0.8 -2.0 V VBE Base-emitter voltage IC=-5A ; VCE=-5V -1.0 -1.5 V ICBO Collector cut-off current VCB=-140V; IE=0 -5 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 µA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-5A ; VCE=5V 35 fT Transition frequency IC=-1A ; VCE=-5V 30 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 480 pF hFE-1 Classifications R O 55-110 80-160 |
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