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1N4448 Datasheet(PDF) 1 Page - MIC GROUP RECTIFIERS |
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1N4448 Datasheet(HTML) 1 Page - MIC GROUP RECTIFIERS |
1 / 4 page FEATURES Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation MECHANICAL DATA Case: DO-35 Weight: apprax: 0.13gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified FAST SWITCHING DIODES 1N4448 MIC INVESTMENTS (CHINA) COMPANY LIMITED Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz I0 1501) mA Surge Forward Current at t < 1 s and Tj = 25 °C IFSM 500 mA Power Dissipation at Tamb = 25 °C Ptot 5001) mW Junction Temperature Tj 175 °C Storage Temperature Range TS –65 to +175 °C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. |
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