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QP12W05S-37 Datasheet(PDF) 3 Page - MORNSUN Science& Technology Ltd. |
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QP12W05S-37 Datasheet(HTML) 3 Page - MORNSUN Science& Technology Ltd. |
3 / 3 page The copyright and authority for the interpretation of the products are reserved by Mornsun Specifications subject to change without notice. QP12W 05S-37 A/1-2009 Page 3 of 3 Outline Dimensions (Unit:mm) Note: Unit: mm General tolerances: ±0.3mm PIN FUNCTION: Pin Description 1 Power supply(+) 2 Power supply(-) 3 Drive signal input(+) 4 Drive signal input(-) 8 DC/DC converter output(+) 9 DC/DC converter output(COM) 10 DC/DC converter output(-) 11 Drive output 12 Collector 13 Detect of short circuit 14 Adjustment of Soft turn-off time 15 Fault signal output 16 Adjustment of short-circuit detection time delay Application Examples Rg DZ2 DZ3 DZ1 D1 Rf C1 C3 C2 15 - + VI 14 10 9 8 12 11 13 4 3 2 1 QP12W05S-37 VD cf 4.7kΩ 16 Ctrip Application Notes 1. The isolated DC/DC converter is only for the gate drive; 2. The IGBT gate-emitter drive loop wiring must be shorter than 1 meter; 3. The IGBT gate-emitter drive loop wiring should be twisted; 4. If large voltage spike is generated at the collector of the IGBT, the IGBT gate resistor should be increased; 5. The external capacitors or resistors should be set as close as possible to the Hybrid IC; 6. The voltage compensate capacitors should be low impedance and be located as close as possible to the Hybrid IC; 7. The peak reverse voltage of the diode D1(to connect PIN13) must be higher than the peak value of the IGBT collector voltage; 8. When recovery current flow in D1, PIN13 is applied high voltage. In the case, counterplan for protection which insert a zener diode between PIN10 and 13 are necessary like above diagram(DZ1); 9. When the built in short-circuit protection circuit need not be used, please connect resistance of 4.7kΩ between PIN9 and 13(D1and DZ1are not required). VD=15V VI=5V±5% C1:100uF (Low impedance) C2:100uF (Low impedance) C3:100uF (Low impedance) Ctrip: Depend on need. Cf: Depend on need Rf: Depend on need Rg:5 Ω (Adjustable) DZ1:30V DZ2, DZ3:18V D1: Fast recovery diode (trr ≤0.2μs) 0.5 ± 0.1 52MAX 1 2.54 16 8 4 38.1 15x2.54 0.25 ± 0.05 15MAX |
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