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SIE860DF Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIE860DF Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 68786 S-82582-Rev. A, 27-Oct-08 www.vishay.com 3 Vishay Siliconix SiE860DF New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 20 40 60 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS =10thru 4 V VGS =3 V VGS =2 V 0.0010 0.0014 0.0018 0.0022 0.0026 0.0030 020 40 60 80 ID - Drain Current (A) VGS =4.5 V VGS =10 V 0 2 4 6 8 10 020 40 60 80 Qg - Total Gate Charge (nC) VDS =24 V VDS =15 V ID =20A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 Ciss VDS - Drain-to-Source Voltage (V) Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =10 V VGS =4.5 V ID =21.7A |
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