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SGM2308 Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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SGM2308 Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 4 page  Elektronische Bauelemente S GM2308 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature |
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