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Dated : 20/05/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MMBTSC3356W
NPN Silicon Epitaxial Planar Transistor
for microwave low noise amplifier at VHF, UHF and
CATV band.
The transistor is subdivided into three groups, Q, R
and S, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
20
V
Collector Emitter Voltage
VCEO
12
V
Emitter Base Voltage
VEBO
3
V
Collector Current
IC
100
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 65 to + 150
O
C
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 10 V, IC = 20 mA Current Gain Group
Q
R
S
hFE
hFE
hFE
50
80
125
-
-
-
100
160
250
-
-
-
Collector Cutoff Current
at VCB = 10 V
ICBO
-
-
1
µA
Emitter Cutoff Current
at VEB = 1 V
IEBO
-
-
1
µA
Gain Bandwidth Product
at VCE = 10 V, IC = 20 mA
fT
-
7
-
GHz
Feed-Back Capacitance
at VCB = 10 V, f = 1 MHz
Cre
1)
-
0.55
1
pF
Insertion Power Gain
at VCE = 10 V, IC = 20 mA, f = 1 GHz
│S21e│
2
-
11.5
-
dB
Noise Figure
at VCE = 10 V, IC = 7 mA, f = 1 GHz
NF
-
1.1
2
dB
1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
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