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ML9266 Datasheet(PDF) 4 Page - Minilogic Device Corporation Limited |
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ML9266 Datasheet(HTML) 4 Page - Minilogic Device Corporation Limited |
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4 / 5 page  ■ Applications ■ Application Note ● High Current Application ● Output Voltage Setting switching regulator (VOUT) can be set R1 R2 ● Feedback Loop Design ◆ Follow Equation A ◆ recommended. ◆ ● High Voltage Application leakage, and improper probing to FB pins. ◆ to hundreds K . ● Multi-Output Applications feedback needed. Such "high impedance loops" are sensitive to any interference, which require careful layout and avoid any interference, e.g. probing to FB pin. suspend modes, the higher values of R1and R2 are R1 can improve the noise immunity of the feedback loops, especially in an improper layout. An empirical suggestion is around 0~33pF for feedback resistors of M , and 10nF~0.1µF for feedback resistors of tens For applications without standby or suspend modes, lower values of R1 and R2 are preferred. For applications concerning the current consumption in standby or =1.25V/R2), however resistors beyond 5M are not Lower R gives better noise immunity, and is less sensitive to interference, layout parasitics, FB node A proper value of feed forward capacitor parallel with R2 based on the trade-off between quiescent current consumption and interference immunity is stated below: Higher R reduces the quiescent current (Path current Referring to application circuits, the output voltage of the Referring to application circuits, The selection of R1and VOUT1 = (1 + ) × 1.25V ・・・A ML9266 IPCore CE EXT VDD ML9266 GND FB LX L1 3.3--10uH C2 1uF C5 100uF D1 C1 100uF 1N5819 Vin Q1 NMOS Vout 3.3V/5V R1 1.6M/3M R2 980k/1M + + CE EXT VDD ML9266 GND FB LX L1 4.7uH R1 R2 C2 C1 C3 CVDD C4 100uF D1 RVDD 100 RM 12V / 9V 300mA Vin=3.1V～5V Vout=12V + 1N5819 Vin=2.8V ～5V Vout=9V + Q1 NMOS CVDD=1uF RM=0.22 C3=0.1uF R1=860K/620K R2=100K C1=100uF C2=1uF R2=100 R1=620K C6=0.1uF CE EXT VDD ML9266 GND FB LX L1 3.3--10uH C3 10uF C1 1uF D1 C4 10uF 1N5819 Vin 3.3V/5V Vout2 +18V 10mA R1 R3 100 C2 10uF Q1 NMOS C5 10uF R2 C6 C7 1uF C8 1uF Vout1 +9V 100mA Vout3 -9V 10mA P4 / 5 Rev. D, May 2008 |
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