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SSG6680 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG6680 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 5 page  Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 30 0.02 1.0 3.0 100 1 25 11 18 16.8 4.2 8 8.9 7.3 25.6 18.6 1450 285 180 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=15V ID=1A VGS=10V RG=5.5 RD=10 Ω Ω ID=11.5A VDS=15V VGS=5V VGS=10V, ID=11.5A VGS=4.5V, ID=9.5A VGS=0V, ID=250uA VGS= 25A ± VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=1mA _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Forward Transconductance Gfs S 30 VDS=15V, ID=11.5A _ _ _ _ _ C o C o C o C o 2 2 _ _ Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) 2 o Source-Drain Diode Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ IS=3 5 . A,VGS=0V,Tj=25 C V 1.3 Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse width 300us, dutycycle 2%. ≦ ≦ Continuous Source Current (Body Diode) VD=VG=0V, VS=1.3V _ _ Is A 1.92 o 2 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 3.Surface mounted on 1 inch2 copper pad of FR4 board; 125 when mounted on min. copper pad. °C/W Elektronische Bauelemente SSG 6680 11.5A, 30V,RDS(ON) 11m N-Channel Enhancement Mode Power Mos.FET Ω |
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Similar Description - SSG6680 |
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