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SSG9922E Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9922E Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 20 0.05 0.5 1.2 10 10 100 20 25 25 3 9 11 12 47 23 1730 280 240 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=20V f=1.0MHz VDD=15V ID=1A VGS=4.5V RG=3.3 RD=15 Ω Ω ID=6A VDS=16V VGS=4.5V VGS=4.5V, ID=6A VGS=2.5V, ID=4A VGS=0V, ID=250uA VGS= 12V ± VDS=20V,VGS=0 VDS=16V,VGS=0 VDS=VGS, ID=1mA Reference to 25 , ID=1mA _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Forward Transconductance Gfs S 22 VDS=4.5V, ID=6A _ _ _ 2770 40 C o C o C o C o 2 2 _ _ Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) 2 o Source-Drain Diode Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ IS=0.84A , VGS=0V. V 1.2 Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. Reverse Recovery Time Reverse Recovery Charge _ _ _ _ Trr Qrr nC nS 24 18 dl/dt=100A/us 2 IS=6A, VGS=0V. ≦ ≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad. 2 Gate Resistance Rg 2.2 _ _ Ω f=1.0MHz http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 4 Elektronische Bauelemente SSG 9922E 6.8A, 20V,RDS(ON) 20m N-Channel Enhancement Mode Power Mos.FET Ω |
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