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SSG9973 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9973 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page  Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 60 0.06 1.0 3.0 100 1 25 80 100 8 2 4 8 4 20 6 700 80 50 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=30V ID=1A VGS=10V RG=3.3 RD=30 Ω Ω ID=3.9A VDS=48V VGS=4.5V VGS=10V, ID=3.9A VGS=4.5V, ID=2A VGS=0V, ID=250uA VGS= 2 V ± 0 VDS=60V,VGS=0 VDS=48V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=1mA _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Forward Transconductance Gfs S 3.5 VDS=10V, ID=3.9A _ _ _ 1120 13 2 2 2 o C o C o C o C o http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Source-Drain Diode Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ IS=3.9A , VGS=0V. V 1.2 Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. Reverse Recovery Time Reverse Recovery Charge _ _ _ _ Trr Qrr nC nS 28 35 dl/dt=100A/us 2 IS=3.9A , VGS=0V. ≦ ≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board; 125OC/W when mounted on min. copper pad. 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SSG9973 3.9A, 60V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET Ω |
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Similar Description - SSG9973 |
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