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SSG9975 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9975 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page  http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 60 0.06 1.0 3.0 100 1 25 21 27 26 6 14 14 7 40 13 2320 200 170 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS= 25V f=1.0MHz VDD=30V ID=1A VGS=10V RG=3.3 RD=30 Ω Ω ID=7A VDS=48V VGS=4.5V VGS=10V, ID=7A VGS=4.5V, ID=5A VGS=0V, ID=250uA VGS= 25V ± VDS=60V,VGS=0 VDS=48V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=1mA _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Forward Transconductance Gfs S 12 VDS=10V, ID=7A _ _ _ 3700 C o C o C o C o 2 2 _ _ Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) 2 o Source-Drain Diode Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage Reverse Recovery Time VSD Trr _ _ _ _ IS=1.7A, VGS=0V. Is=7A, VGS=0V V nS 1.2 34 _ Reverse Recovery Charge Qrr 48 nC _ dl/dt=100A/us 2 2 Notes: 1.Pulse width limited by Max. junction temperature. 40 Elektronische Bauelemente SSG9975 7.6A, 60V,RDS(ON) 21m N-Channel Enhancement Mode Power Mos.FET Ω 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board;135 when mounted on min. copper pad. °C/W |
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