MPSA13 datasheet(1/1 Pages) SEMTECH_ELEC

Part #	MPSA13

Description	NPN Silicon Epitaxial Planar Transistors

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Manufacturer	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

Direct Link	http://www.semtech.net.cn

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Dated : 25/05/2006

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

ST 2SB772T

PNP SILICON EPITAXIAL POWER TRANSISTOR

These devices are intended for use in audio

frequency power amplifier and low speed switching

applications

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector Base Voltage

-VCBO

40

V

Collector Emitter Voltage

-VCEO

30

V

Emitter Base Voltage

-VEBO

5

V

Collector Current - DC

Collector Current - Pulse

1)

-IC

3

7

A

Base Current - DC

-IB

0.6

A

Total Power Dissipation @ TC = 25 OC

PD

10

W

Total Power Dissipation @ TA = 25 OC

PD

1.0

W

Operating and Storage Junction Temperature Range

TJ, Ts

- 65 to + 150

O

C

1) PW=10ms, Duty Cycle ≤ 50%

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 2 V, -IC = 20 mA

at -VCE = 2 V, -IC = 1 A

R

Q

P

E

hFE

30

60

100

160

200

-

120

200

320

400

-

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V(BR)CEO

30

-

V

Collector Base Breakdown Voltage

at -IC = 1 mA

-V(BR)CBO

40

-

V

Emitter Base Breakdown Voltage

at -IE = 1 mA

-V(BR)EBO

5

-

V

Collector Cutoff Current

at -VCB = 30 V

-ICBO

-

1

µA

Emitter Cutoff Current

at -VEB = 3 V

-IEBO

-

1

µA

Collector Emitter Saturation Voltage

at -IC = 2 A, -IB = 200 mA

-VCE(sat)

-

0.5

V

Base Emitter Saturation Voltage

at -IC = 2 A, -IB = 200 mA

-VBE(sat)

-

2

V

Output Capacitance

at -VCB = 10 V, f = 1 MHz

CO

-

55

-

pF

Current Gain Bandwidth Product

at -IC = 100 mA, -VCE = 5 V

fT

-

80

-

MHz

E

B

C

TO-126 Plastic Package

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