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Dated : 03/01/2008
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2SC2884U
NPN Silicon Epitaxial Planar Transistor
for audio frequency amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
35
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Collector Power Dissipation
PC
500
mW
Junction Temperature
TJ
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group
at VCE = 1 V, IC = 700 mA
O
Y
hFE
hFE
hFE
100
160
35
-
-
-
200
320
-
-
-
-
Collector Base Cutoff Current
at VCB = 35 V
ICBO
-
-
0.1
µA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
-
0.1
µA
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
35
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
30
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 20 mA
VCE(sat)
-
-
0.5
V
Base Emitter On Voltage
at VCE = 1 V, IC = 10 mA
VBE(on)
0.5
-
0.8
V
Transition Frequency
at VCE = 5 V, IC = 10 mA
fT
-
120
-
MHz
Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
-
13
-
pF