LESHAN RADIO COMPANY, LTD.

L74VHC1GT01

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TSOP–5/SOT–23/SC–59

DT SUFFIX

The L74VHC1GT01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate

CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including an open drain output which provides the ability to set output switching level.

resistor and power supply.

• Power Down Protection Provided on Inputs

• Pin and Function Compatible with Other Standard Logic Families

• Chip Complexity: FETs = 62; Equivalent Gates = 16

SC–88A / SOT–353/SC–70

DF SUFFIX

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MARKING DIAGRAMS

Pin 1

d = Date Code

Pin 1

d = Date Code

Figure 1. Pinout (Top View)

Figure 2. Logic Symbol

PIN ASSIGNMENT

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IN B

2

IN A

3

GND

4

OUT Y

FUNCTION TABLE

Inputs

Output

AB

Y

LL

Z

LH

Z

HL

Z

HH

L

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 5 of this data sheet.

2–Input NAND Gate with Open Drain Output

The device input is compatible with TTL–type input thresholds and the output has a full 5.0 V CMOS level output swing. The input

protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic–level translator from

3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high–voltage power

supply.

The L74VHC1GT01 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This

allows the L74VHC1GT01 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when

battery backup, hot insertion, etc.

with LSTTL–Compatible Inputs

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