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Dated : 25/06/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
SB721Q-40
Silicon Epitaxial Planar Schottky Barrier Diode
Applications
• High speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
40
V
Reverse Voltage
VR
40
V
Mean Rectifying Current
IO
30
mA
Peak Forward Surge Current
IFSM
200
mA
Junction Temperature
TJ
125
O
C
Storage Temperature Range
Tstg
- 40 to + 125
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at IF = 1 mA
VF
-
-
0.37
V
Reverse Current
at VR = 25 V
IR
-
-
0.5
μA
Reverse Voltage
at IR = 10 μA
VR
40
-
-
V
Capacitance between Terminals
at VR = 1 V, f = 1 MHz
CT
-
2
-
pF
Max. 2.9
Max. 1.9
Glass Case DO-34
Max. 0.45
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
Dimensions in mm
Black
Black
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