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Dated : 12/03/2005
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BAS86
SCHOTTKY BARRIER DIODE
Ultra High-Speed Switching, Voltage Clamping
Protection Circuits and Blocking Applications
Features
•
Low forward voltage.
•
Guard ring protected.
• Hermetically-sealed leaded glass package.
•
High breakdown voltage.
Absolute Maximum Ratings (Ta = 25
oC)
Parameter
Symbol
Limits
Unit
Continuous reverse voltage
VR
50
V
Continuous forward current
IF
200
mA
Average forward current
IF(AV)
200
mA
Repetitive peak forward current tp≦1sec.; δ≦0.5
IFRM
500
mA
Non-repetitive peak forward current
tp=10ms
IFSM
5
A
Operating ambient temperature
Tamb
-65 to +125
℃
Junction temperature
Tj
125
℃
Storage temperature range
TS
-65 to +150
℃
Thermal resistance from junction to ambient
Rthj-a
320
K/W
Characteristics at Ta = 25
oC
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
at IF = 0.1mA
at IF = 1mA
at IF = 10mA
at IF = 30mA
at IF = 100mA
VF
VF
VF
VF
VF
-
-
-
-
-
-
-
-
-
-
300
380
450
600
900
mV
mV
mV
mV
mV
Reverse current
(Note 1)
at VR = 40V
IR
-
-
5
μA
Reverse recovery time
at IF = 10mA, IR = 10mA, RL = 100Ω
trr
-
-
4
ns
Diode capacitance
at VR = 1V, f = 1MHz
Cd
-
-
8
pF
Note 1: Pulsed test: tp=300
μs; δ=0.02.
LL34
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