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NBXSBA008LNHTAG Datasheet(PDF) 3 Page - ON Semiconductor |
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NBXSBA008LNHTAG Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 6 page  NBXSBA008 http://onsemi.com 3 Table 5. DC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2) Symbol Characteristic Conditions Min. Typ. Max. Units IDD Power Supply Current 75 100 mA VIH OE Input HIGH Voltage 2000 VDD mV VIL OE Input LOW Voltage GND − 300 800 mV IIH Input HIGH Current OE FSEL −100 −100 +100 +100 mA IIL Input LOW Current OE FSEL −100 −100 +100 +100 mA VOH Output HIGH Voltage VDD = 3.3 V VDD−1195 2105 VDD−945 2355 mV VOL Output LOW Voltage VDD = 3.3 V VDD−1945 1355 VDD−1600 1700 mV VOUTPP Output Voltage Amplitude 680 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4. Table 6. AC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency 161.1328 MHz Df Frequency Stability (Note 4) ±50 ppm FNOISE Phase−Noise Performance fCLKout = 161.1328 MHz (See Figure 3) 100 Hz of Carrier −109 dBc/Hz 1 kHz of Carrier −125 dBc/Hz 10 kHz of Carrier −132 dBc/Hz 100 kHz of Carrier −132 dBc/Hz 1 MHz of Carrier −141 dBc/Hz 10 MHz of Carrier −161 dBc/Hz tjit(F) RMS Phase Jitter 12 kHz to 20 MHz 0.4 0.9 ps tjitter Cycle to Cycle, RMS 1000 Cycles 1.5 8 ps Cycle to Cycle, Peak−to−Peak 1000 Cycles 15 30 ps Period, RMS 10,000 Cycles 1 4 ps Period, Peak−to−Peak 10,000 Cycles 10 20 ps tOE/OD Output Enable/Disable Time 200 ns tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 48 50 52 % tR Output Rise Time (20% and 80%) 250 400 ps tF Output Fall Time (80% and 20%) 250 400 ps tstart Start−up Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 ppm NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4. 4. Parameter guarantee 10 years aging. Includes initial stability at 25°C, shock, vibration, and first year aging. |
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