EIC5964-10 datasheet(1/4 Pages) EXCELICS

Part #	EIC5964-10

Description	5.90-6.40 GHz 10-Watt Internally Matched Power FET

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Manufacturer	EXCELICS [Excelics Semiconductor, Inc.]

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EIC5964-10

UPDATED 08/21/2007

5.90-6.40 GHz 10-Watt Internally Matched Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 4

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

Revised October 2007

Excelics

0.685

0.617

0.315

0.010

0.055

0.158

SN

0.803

0.945

YYWW

2X 0.079 MIN

0.095

0.004

0.580

0.024

0.055

0.168

4X 0.102

FEATURES

•

5.90–6.40GHz Bandwidth

•

Input/Output Impedance Matched to 50 Ohms

•

+40.5 dBm Output Power at 1dB Compression

•

10.0 dB Power Gain at 1dB Compression

•

37% Power Added Efficiency

•

-46 dBc IM3 at PO = 29.5 dBm SCL

•

100% Tested for DC, RF, and RTH

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Caution! ESD sensitive device.

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

P1dB

Output Power at 1dB Compression

f = 5.90-6.40GHz

VDS = 10 V, IDSQ ≈ 3200mA

39.5

40.5

dBm

G1dB

Gain at 1dB Compression

f = 5.90-6.40GHz

VDS = 10 V, IDSQ ≈ 3200mA

9.0

10.0

dB

∆G

Gain Flatness

f = 5.90-6.40GHz

VDS = 10 V, IDSQ ≈ 3200mA

±0.6

dB

PAE

Power Added Efficiency at 1dB Compression

VDS = 10 V, IDSQ ≈ 3200mA

f = 5.90-6.40GHz

37

%

Id1dB

Drain Current at 1dB Compression

f = 5.90-6.40GHz

3200

3600

mA

IM3

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L

2

VDS = 10 V, IDSQ ≈ 65% IDSS

f = 6.40GHz

-43

-46

dBc

IDSS

Saturated Drain Current

VDS = 3 V, VGS = 0 V

5800

6400

mA

VP

Pinch-off Voltage

VDS = 3 V, IDS = 60 mA

-2.5

-4.0

V

RTH

Thermal Resistance

3

2.5

3.0

oC/W

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

15V

10V

Vgs

Gate-Source Voltage

-5V

-4V

Igf

Forward Gate Current

136mA

40.8mA

Igr

Reverse Gate Current

-27.2mA

-6.8mA

Input Power

40dBm

@ 3dB Compression

Tch

Channel Temperature

175C

Tstg

Storage Temperature

-65C to +175C

Pt

Total Power Dissipation

50W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

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