EIC7177-10

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 4

Revised October 2003

7.10-7.70 GHz 10-Watt Internally-Matched Power FET

FEATURES

•

7.10 – 7.70 GHz Bandwidth

•

Input/Output Impedance Matched to 50 Ohms

•

+40.5 dBm Output Power at 1dB Compression

•

9 dB Power Gain at 1dB Compression

•

35% Power Added Efficiency

•

-46 dBc IM3 at Po = 29.5 dBm SCL

•

Hermetic Metal Flange Package

•

DESCRIPTION

The EIC7177-10 is a high power, highly linear,

single stage MFET amplifier in a flange mount

package. This amplifier features Excelics’ unique

MESFET transistor technology.

Caution! ESD sensitive device.

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression f = 7.10-7.70GHz

39.5

40.5

dBm

Gain at 1dB Compression

f = 7.10-7.70GHz

8.0

9.0

dB

∆G

Gain Flatness

f = 7.10-7.70GHz

±0.6

dB

PAE

Power Added Efficiency at 1dB Compression

f = 7.10-7.70GHz

35

%

Drain Current at 1Db Compression f = 7.10-7.70GHz

3200

3600

mA

IM3

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L

2

f = 7.70 GHz

-43

-46

dBc

Saturated Drain Current

5800

6400

mA

Pinch-off Voltage

-2.5

-4.0

V

Thermal Resistance

3

2.5

3.0

Notes:

1.

Tested with 100 Ohm gate resistor.

2.

S.C.L. = Single Carrier Level.

3.

Overall Rth depends on case mounting.