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EIC7785-8NH Datasheet(PDF) 3 Page - Excelics Semiconductor, Inc. |
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EIC7785-8NH Datasheet(HTML) 3 Page - Excelics Semiconductor, Inc. |
3 / 4 page EIC7785-8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 4 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised October 2007 Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 175 Case Temperature (°C) Safe Operating Region Potentially Unsafe Operating Region f1 f2 (2f1-f2) f1 f2 (2f2-f1) IM3 Pout Pin IP 3 = Pout + IM3/2 THIRD-ORDER INTERCEPT POINT IP3 f1 or f2 (2f2 - f1) or (2f1 - f2) Pin [S.C.L.] (dBm) IM3 Typical Power Data (VDS = 10 V, IDSQ = 2200 mA) Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) P-1dB & G-1dB vs Frequency 36 37 38 39 40 41 7.6 7.8 8.0 8.2 8.4 8.6 Frequency (GHz) 7 8 9 10 11 12 P-1dB (dBm) G-1dB (dB) IM3 vs Output Power f1 = 8.50 GHz, f2 = 8.51 GHz -60 -55 -50 -45 -40 -35 -30 -25 -20 23 24 25 26 27 28 29 30 31 32 33 34 Pout [S.C.L.] (dBm) IM3 (dBc) |
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