EIC8596-2

UPDATED 07/25/2007

8.50-9.60 GHz 2-Watt Internally-Matched Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 2

Revised July 2007

FEATURES

•

8.50-9.60GHz Bandwidth

•

Input/Output Impedance Matched to 50 Ohms

•

+33.5 dBm Output Power at 1dB Compression

•

8.0 dB Power Gain at 1dB Compression

•

30% Power Added Efficiency

•

-46 dBc IM3 at PO = 22.5 dBm SCL

•

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

f = 8.50-9.60GHz

32.5

33.5

dBm

Gain at 1dB Compression

f = 8.50-9.60GHz

7.0

8.0

dB

∆G

Gain Flatness

f = 8.50-9.60GHz

±0.6

+ 0.8

dB

PAE

Power Added Efficiency at 1dB Compression

f = 8.50-9.60GHz

30

%

Drain Current at 1dB Compression

f = 8.50-9.60GHz

600

700

mA

IM3

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L

2

f = 9.60GHz

-43

-46

dBc

Saturated Drain Current

1000

1250

mA

Pinch-off Voltage

-2.5

-4.0

V

Thermal Resistance

3

11

12

Notes:

1.

Tested with 100 Ohm gate resistor.

2.

S.C.L. = Single Carrier Level.

3.

Overall Rth depends on case mounting.

MAXIMUM RATING AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

15

10V

Vgs

Gate-Source Voltage

-5

-4V

Igsf

Forward Gate Current

21.6mA

7.2mA

Igsr

Reverse Gate Current

-3.6mA

-1.2mA

Pin

Input Power

32.5dBm

@ 3dB Compression

Tch

Channel Temperature

175

175

Tstg

Storage Temperature

-65 to +175

-65 to +175

Pt

Total Power Dissipation

12.5W

12.5W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.