EIC8596-4

UPDATED 08/21/2007

8.50-9.60GHz 4-Watt Internally-Matched Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 4

Revised October 2007

FEATURES

•

8.50 –9.60GHz Bandwidth

•

Input/Output Impedance Matched to 50 Ohms

•

+36.5 dBm Output Power at 1dB Compression

•

7.5 dB Power Gain at 1dB Compression

•

30% Power Added Efficiency

•

-43 dBc IM3 at Po = 25.5 dBm SCL

•

Caution! ESD sensitive device.

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression f = 8.50-9.60GHz

35.5

36.5

dBm

Gain at 1dB Compression

f = 8.50-9.60GHz

6.5

7.5

dB

∆G

Gain Flatness

f = 8.50-9.60GHz

±0.6

dB

PAE

Power Added Efficiency at 1dB Compression

f = 8.50-9.60GHz

30

%

Drain Current at 1dB Compression f = 8.50-9.60GHz

1100

1300

mA

IM3

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L

2

f = 9.60GHz

-40

-43

dBc

Saturated Drain Current

1800

2200

mA

Pinch-off Voltage

-2.5

-4.0

V

Thermal Resistance

3

5.0

6.0

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

15V

10V

Vgs

Gate-Source Voltage

-5V

-4V

Igf

Forward Gate Current

48mA

14.4mA

Igr

Reverse Gate Current

-9.6mA

-2.4mA

Pin

Input Power

36.0dBm

@ 3dB Compression

Tch

Channel Temperature

175C

175C

Tstg

Storage Temperature

-65C to +175C

-65C to +175C

Pt

Total Power Dissipation

25W

25W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.