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EIC8596-4NH Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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EIC8596-4NH Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
1 / 4 page EIC8596-4 UPDATED 08/21/2007 8.50-9.60GHz 4-Watt Internally-Matched Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 4 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised October 2007 FEATURES • 8.50 –9.60GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.5 dBm Output Power at 1dB Compression • 7.5 dB Power Gain at 1dB Compression • 30% Power Added Efficiency • -43 dBc IM3 at Po = 25.5 dBm SCL • 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL PARAMETERS/TEST CONDITIONS 1 MIN TYP MAX UNITS P1dB Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 1100mA 35.5 36.5 dBm G1dB Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 1100mA 6.5 7.5 dB ∆G Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 1100mA ±0.6 dB PAE Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 8.50-9.60GHz 30 % Id1dB Drain Current at 1dB Compression f = 8.50-9.60GHz 1100 1300 mA IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L 2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 9.60GHz -40 -43 dBc IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1800 2200 mA VP Pinch-off Voltage VDS = 3 V, IDS = 20 mA -2.5 -4.0 V RTH Thermal Resistance 3 5.0 6.0 oC/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 15V 10V Vgs Gate-Source Voltage -5V -4V Igf Forward Gate Current 48mA 14.4mA Igr Reverse Gate Current -9.6mA -2.4mA Pin Input Power 36.0dBm @ 3dB Compression Tch Channel Temperature 175C 175C Tstg Storage Temperature -65C to +175C -65C to +175C Pt Total Power Dissipation 25W 25W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. |
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