EPA160B

DATA SHEET

High Efficiency Heterojunction Power FET

S-PARAMETERS

8V, 1/2 Idss

FREQ

--- S11 ---

--- S21 ---

--- S12 ---

--- S22 ---

(GHz)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

1.0

0.902 -115.3 15.468

116.0

0.025

38.1

0.298 -138.8

2.0

0.884 -146.5

8.678

96.8

0.028

27.8

0.342 -156.8

3.0

0.881 -158.7

5.971

86.9

0.030

28.6

0.351 -163.1

4.0

0.881 -166.4

4.579

79.4

0.031

30.7

0.359 -165.6

5.0

0.880 -172.1

3.705

72.6

0.032

35.1

0.367 -165.7

6.0

0.878 -176.6

3.113

66.5

0.034

38.3

0.381 -165.8

7.0

0.879

179.0

2.703

60.7

0.036

40.0

0.396 -164.7

8.0

0.882

174.5

2.374

55.1

0.038

41.6

0.416 -163.6

9.0

0.881

169.9

2.110

49.6

0.038

44.4

0.437 -162.9

10.0

0.887

165.5

1.900

44.4

0.040

45.0

0.461 -161.9

11.0

0.891

160.6

1.718

38.8

0.042

45.8

0.491 -161.5

12.0

0.898

155.6

1.557

33.2

0.044

45.9

0.521 -161.7

13.0

0.905

151.0

1.411

27.7

0.044

45.4

0.554 -162.8

14.0

0.908

146.6

1.277

22.3

0.046

43.1

0.580 -164.2

15.0

0.910

143.2

1.151

17.2

0.047

42.3

0.605 -166.4

16.0

0.912

140.2

1.051

12.1

0.048

39.5

0.626 -168.6

17.0

0.920

137.9

0.956

7.7

0.050

37.6

0.645 -171.6

18.0

0.934

135.9

0.880

3.0

0.052

37.6

0.665 -174.5

19.0

0.934

134.4

0.810

-1.7

0.054

34.6

0.684 -177.7

20.0

0.932

133.9

0.742

-5.7

0.057

33.8

0.697

178.4

21.0

0.923

134.3

0.684

-8.6

0.060

32.2

0.700

174.7

22.0

0.934

135.0

0.641

-11.5

0.063

32.4

0.707

171.7

23.0

0.946

134.6

0.616

-14.3

0.068

32.5

0.718

168.7

24.0

0.948

133.8

0.579

-17.7

0.072

33.3

0.719

166.0

25.0

0.949

133.0

0.558

-20.0

0.079

32.7

0.722

163.7

26.0

0.935

131.3

0.527

-22.3

0.084

33.0

0.723

162.4

Note:

The data included 0.7 mils diameter Au bonding wires:

2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.

P-1dB & PAE vs. Vds

25

30

35

40

4

5

6

7

8

Drain-Source Voltage (V)

30

35

40

45

50

55

f = 12 GHz

Ids = 50% Idss

Pout & PAE vs. Pin

0

10

20

30

40

50

0

5

10

15

20

25

Pin (dBm)

f = 12 GHz

Vds = 8V, Ids = 50% Idss

PAE

Pout