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RFMA1720-0.5W Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc.

Part # RFMA1720-0.5W
Description  17.5 - 20.0 GHz Power Amplifier MMIC
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Manufacturer  EXCELICS [Excelics Semiconductor, Inc.]
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RFMA1720-0.5W Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc.

  RFMA1720-0.5W Datasheet HTML 1Page - Excelics Semiconductor, Inc. RFMA1720-0.5W Datasheet HTML 2Page - Excelics Semiconductor, Inc.  
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RFMA1720-0.5W
ISSUED 05/08/2008
17.5 – 20.0 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised May 2008
-0.5W-01
RFMA1720
Excelics
FEATURES
17.5– 20.0GHz Operating Frequency Range
26.5dBm Output Power at 1dB Compression
30.0 dB Typical Small Signal Gain
-41dBc Typical OIM3 @ each tone Pout 15dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
17.5
20
GHz
P1dB
Output Power at 1dB Gain Compression
25.5
26.5
dBm
GSS
Small Signal Gain
27.0
30.0
dB
OIMD3
Output 3
rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 15.0 dBm
-41
-38
dBc
Input RL
Input Return Loss
-10
-7
dB
Output RL
Output Return Loss
-8
dB
Idd
Drain Current
500
570
mA
Vdd
Drain Supply Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
13
oC/W
Tb
Operating Base Plate Temperature
-30
+80
ºC
MAXIMUM RATINGS @25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
1,2
VDD
Drain Supply Voltage
12V
8V
VGG
Gate Supply Voltage
-8V
-3V
IDD
Drain Current
Idss
1.1A
IGG
Gate Current
60mA
10 mA
PIN
Input Power
20dBm
@ 3dB compression
TCH
Channel Temperature
175°C
150°C
TSTG
Storage Temperature
-65/175°C
-65/150°C
PT
Total Power Dissipation
8.8W
7.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –Tb)/RTH; where Tb = operating base plate temperature


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