MOTOROLA

SEMICONDUCTOR

TECHNICAL DATA

Motorola TVS/Zener Device Data

8-1

6.2 Volt OTC 400 mW DO-35 Data Sheet

Temperature-Compensated

Zener Reference Diodes

Temperature-compensated zener reference diodes utilizing a single chip oxide passi-

vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed

structure.

Mechanical Characteristics:

CASE: Hermetically sealed, all-glass

DIMENSIONS: See outline drawing.

FINISH: All external surfaces are corrosion resistant and leads are readily solderable.

POLARITY: Cathode indicated by polarity band.

WEIGHT: 0.2 Gram (approx.)

MOUNTING POSITION: Any

Maximum Ratings

Junction Temperature: – 55 to +175

°C

Storage Temperature: – 65 to +175

°C

DC Power Dissipation: 400 mW @ TA = 50°C

WAFER FAB LOCATION: Phoenix, Arizona

ASSEMBLY/TEST LOCATION: Phoenix, Arizona

JEDEC

Type No.

Maximum

Voltage Change

∆VZ (Volts)

(Note 1)

Ambient

Test Temperature

°C

±1°C

Temperature

Coefficient

For Reference Only

%/

°C

(Note 1)

Maximum

Dynamic Impedance

ZZT Ohms

(Note 2)

1N821

0.096

– 55, 0, +25, +75, +100

0.01

15

1N823

0.048

0.005

1N825

0.019

0.002

1N827

0.009

0.001

1N829

0.005

0.0005

1N821A

0.096

0.01

10

1N823A

0.048

0.005

1N825A

0.019

0.002

1N827A

0.009

0.001

1N829A

0.005

0.0005

*Tighter-tolerance units available on special request.

1N821,A

1N823,A

1N825,A

1N827,A

1N829,A

TEMPERATURE-

COMPENSATED

SILICON ZENER

REFERENCE DIODES

6.2 V, 400 mW

CASE 299

DO-204AH

GLASS