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AP9575GJ Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

Part # AP9575GJ
Description  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9575GJ Datasheet(HTML) 3 Page - Advanced Power Electronics Corp.

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AP9575GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
50
02
46
8
10
-V DS , Drain-to-Source Voltage (V)
T C =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
0
10
20
30
40
0246
8
10
12
14
-V DS , Drain-to-Source Voltage (V)
T C = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
60
70
80
90
100
2468
10
-V GS , Gate-to-Source Voltage (V)
I D =-9 A
T C =25 ℃
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D = - 12 A
V G = -10V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
0.0
2.0
4.0
6.0
8.0
10.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C


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