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SN75207BD Datasheet(PDF) 6 Page - Texas Instruments |
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SN75207BD Datasheet(HTML) 6 Page - Texas Instruments |
6 / 12 page SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PARAMETER MEASUREMENT INFORMATION tw1 50 Ω VOLTAGE WAVEFORMS VOL VOH 0 V 3 V 1.5 V 1.5 V tw2 1.5 V 1.5 V tPHL(S) tPLH(S) 1.5 V tPLH(D) 1.5 V tPHL(D) Y VOL VOH G or S 3 V 40 mV B 10 mV 10 mV 0 V 40 mV TEST CIRCUIT Pulse Generator (see Note A) Strobe Input (see Note B) 50 Ω VCC+ 2G S 1G See Note D 470 Ω Output 1Y 2Y VCC – 2B 2A 1B 1A 100 mV Vref Differential Input CL = 50 pF (see Note C) Pulse Generator (see Note A) NOTES: A. The pulse generators have the following characteristics: ZO = 50 Ω, tr ≤ 5 ns, tf ≤ 5 ns, tw1 = 500 ns with PRR = 1 MHz, tw2 = 1 µs with PRR = 500 kHz. B. Strobe input pulse is applied to Strobe 1G when inputs 1A–1B are being tested, to Strobe S when inputs 1A–1B or 2A–2B are being tested, and to Strobe 2G when inputs 2A–2B are being tested. C. CL includes probe and jig capacitance. D. All diodes are 1N916. Figure 1. Test Circuit and Voltage Waveforms |
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