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CSM-57071E Datasheet(PDF) 4 Page - China Semiconductor Corporation |
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CSM-57071E Datasheet(HTML) 4 Page - China Semiconductor Corporation |
4 / 6 page CHINA SEMICONDUCTOR Spec. No. CORPORATION Rev. Absolute Maximum Rating - (Ta=25 ) Symbol Unit PAD mW IAF mA IPF mA - mA/ VR V Topr Tstg Electro-optical Characteristics - (Ta=25 ) Symbol Min. Typ. Max. Unit Condition VF - 2.1 2.8 V IF=20mA Iv - 3800 - ucd IF=10mA q - 632 - nm IF=20mA Od - 624 - nm IF=20mA - 35 - nm IF=20mA JS - - 100 A VR=5V IV-m - - 2:1 Ip=80mA 1/16Duty Page 3/5 PS-ND-0710 A Model No CSM-57071E/CSM-57081E Parameter http://www.csctw.com.tw Derating Linear From 25 Per Dice 0.33 5 Dominant Wavelength Reverse Voltage Per Dice Operating Temp. Rating 70 25 Peak Current Per Dice(duty cycle 1/10, 1kHz) 90 Power Dissipation Per Dice Continuous Forward Current Per Dice -35 ~ +85 Storage Temp. -35 ~ +85 Solder temperature 1/16 inch below seating plane for 3 seconds at 260 Forward Voltage Per Segment Parameter Luminous Intensity Matching Ratio Reverse Current Peak Emission Wavelength Luminous Intensity Per Segment Spectrum Radiation Bandwidth |
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