Input

ForwardVoltage (V

1.5

V

I

Reverse Current (I

μAV

Output

Collector-emitter Breakdown (BV

V

I

( Note 2 )

Emitter-collector Breakdown (BV

6

V

I

Collector-emitter Dark Current (I

200

nA

V

Coupled

Current Transfer Ratio (CTR) (Note 2)

SFH618-2

63

125

%

1mA I

SFH618-2

32

%

0.5mA I

SFH618-3

100

200

%

1mA I

SFH618-3

50

%

0.5mA I

SFH618-4

160

320

%

1mA I

SFH618-4

80

%

0.5mA I

Collector-emitterSaturationVoltageV

CESAT

SFH618-2

0.4

V

1mA I

SFH618-3

0.4

V

1mA I

SFH618-4

0.4

V

1mA I

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

7500

V

PK

See note 1

Input-output Isolation Resistance R

ISO

Ω

V

Output Rise Time, tr

4

18

μSV

Output Fall Time, tf

3

18

μSR

DB92370m-AAS/A4

6/8/08

PARAMETER

MIN

TYP MAX UNITS TEST CONDITION

ELECTRICAL CHARACTERISTICS ( T

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.

ABSOLUTEMAXIMUMRATINGS

(25°C unless otherwise specified)

Storage Temperature

-55°C to + 125°C

Operating Temperature

-30°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUTDIODE

Forward Current

50mA

Reverse Voltage

6V

Power Dissipation

70mW

OUTPUTTRANSISTOR

Collector-emitter Voltage BV

CEO

55V

Emitter-collector Voltage BV

ECO

6V

Collector Current

50mA

Power Dissipation

150mW

POWERDISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)