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TC213-40 Datasheet(PDF) 1 Page - Texas Instruments |
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TC213-40 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 21 page TC213 1024- × 512-PIXEL CCD IMAGE SENSOR SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991 Copyright © 1991, Texas Instruments Incorporated 2-1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 • High-Resolution, Solid-State Frame-Transfer Image Sensor • 13.5-mm Image-Area Diagonal • 1000 (H) × 510 (V) Active Elements in Image-Sensing Area • Square Pixels • Low Dark Current • Electron-Hole Recombination Antiblooming • Dynamic Range . . . More Than 60 dB • High Sensitivity • High Photoresponse Uniformity • High Blue Response • Single-Phase Clocking • Solid-State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics description The TC213 is a frame-transfer charge-coupled device (CCD) image sensor that provides very high-resolution image acquisition for image-processing applications such as robotic vision, medical X-ray analysis, and metrology. The image format measures 12.00 mm horizontally by 6.12 mm vertically; the image-area diagonal is 13.5 mm. The image-area pixels are 12- µm square. The image area contains 510 active lines with 1000 active pixels per line. Two additional dark reference lines give a total of 512 lines in the image area, and 24 additional dark-reference pixels per line give a total of 1024 pixels per horizontal line. The storage section of the TC213 contains 512 lines with 1024 pixels per line. This area is protected from exposure to light by an aluminum light shield. Photoelectric charge that is generated in the image area of the TC213 can be transferred into the storage section in less than 500 µs. After image capture (integration time), the readout is accomplished by transferring the charge, one line at a time, into two serial registers located below the storage area, each of which contains 512 data elements and 12 dummy elements. One serial-register clocks out charge that is generated in the odd-numbered columns of pixels in the imaging area; the other serial-register processes charge from the even-numbered columns of the imaging area. The typical serial-register data rate is 10 megapixels per second. Three transfer gates are used to isolate the serial registers. If the storage area or storage and image areas need to be cleared of all charge, charge may be quickly transferred across the serial registers and into the clearing drain, which is located below the serial-register section. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. TRG SRG2 SRG1 CDB RST1 RST2 SUB ADB OUT2 AMP GND OUT1 SAG ABGI IAG SUB SUB TDB SUB IAG ABGI SAG ABGS 24 23 22 21 20 19 18 17 16 15 11 10 9 8 7 6 5 4 3 2 1 DUAL-IN-LINE PACKAGE (TOP VIEW) IDB ABGS 13 12 14 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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