TC213

1024-

× 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

Copyright

2-1

POST OFFICE BOX 655303

Frame-Transfer Image Sensor

Image-Sensing Area

Burn-in, Residual Imaging, Image

Distortion, Image Lag, or Microphonics

description

The TC213 is a frame-transfer charge-coupled device (CCD) image sensor that provides very high-resolution

image acquisition for image-processing applications such as robotic vision, medical X-ray analysis, and

metrology. The image format measures 12.00 mm horizontally by 6.12 mm vertically; the image-area diagonal

is 13.5 mm. The image-area pixels are 12-

µm square. The image area contains 510 active lines with 1000 active

pixels per line. Two additional dark reference lines give a total of 512 lines in the image area, and 24 additional

dark-reference pixels per line give a total of 1024 pixels per horizontal line.

The storage section of the TC213 contains 512 lines with 1024 pixels per line. This area is protected from

exposure to light by an aluminum light shield. Photoelectric charge that is generated in the image area of the

TC213 can be transferred into the storage section in less than 500

µs. After image capture (integration time),

the readout is accomplished by transferring the charge, one line at a time, into two serial registers located below

the storage area, each of which contains 512 data elements and 12 dummy elements. One serial-register clocks

out charge that is generated in the odd-numbered columns of pixels in the imaging area; the other serial-register

processes charge from the even-numbered columns of the imaging area. The typical serial-register data rate

is 10 megapixels per second. Three transfer gates are used to isolate the serial registers. If the storage area

or storage and image areas need to be cleared of all charge, charge may be quickly transferred across the serial

registers and into the clearing drain, which is located below the serial-register section.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together

or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no

circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent

damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication

Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

TRG

SRG2

SRG1

CDB

RST1

RST2

SUB

ADB

OUT2

AMP GND

OUT1

SAG

ABGI

IAG

SUB

SUB

TDB

SUB

IAG

ABGI

SAG

ABGS

24

23

22

21

20

19

18

17

16

15

11

10

9

8

7

6

5

4

3

2

1

DUAL-IN-LINE PACKAGE

(TOP VIEW)

IDB

ABGS

13

12

14

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.