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GFCC30 Datasheet(PDF) 1 Page - Gunter Seniconductor GmbH.

Part # GFCC30
Description  N Channel Power MOSFET with low RDS(on)
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Manufacturer  GSG [Gunter Seniconductor GmbH.]
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Logo GSG - Gunter Seniconductor GmbH.

GFCC30 Datasheet(HTML) 1 Page - Gunter Seniconductor GmbH.

  GFCC30 Datasheet HTML 1Page - Gunter Seniconductor GmbH.  
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Gunter Semiconductor GmbH
Gunter Semiconductor GmbH
Gunter Semiconductor GmbH
Gunter Semiconductor GmbH
GFCC30
N Channel Power MOSFET with low RDS(on)
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃
℃
℃
℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Low RDS(on)
Mechanical Data:
D16
Dimension
2.95mm x 4.75mm
Thickness:
400
µµµµm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
8 mil Al
Absolute Maximum Rating
@Ta=25℃
℃
℃
℃
Characteristics
Symbol
Limit
Unit
Test Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
600
V
VGS=0V, ID=250
µΑ
Static Drain-to - Source On-resistance
RDS(ON)
2.2
Ω
VGS=10V, ID=2.2
Α
Continuous Drain current ( in target package)
ID@25℃
27
A
VGS=10V
Continuous Drain current ( in target package)
ID@100℃
19
A
VGS=10V
Operation Junction
Tj
-55~150
℃
Storage Temperature
TSTR
-55~150
℃
Target Device: IRFBC30
TO-220AB
PD
74
W
@Tc=25℃


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