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2N6260 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N6260 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2N6260 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 80 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.5 V VBE Base -emitter on voltage IC=1.5A ; VCE=2V 1.5 V ICEV Collector cut-off current VCE=40V;VBE(off)=-1.5V TC=150℃ 0.5 1.0 mA ICEO Collector cut-off current VCE=30V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.2 mA hFE-1 DC current gain IC=4A ; VCE=2V 5 hFE-2 DC current gain IC=1.5A ; VCE=2V 20 100 |
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