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2N6371 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N6371 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High dissipation capability ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers ・Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 7 A PD Total Power Dissipation TC=25℃ 117 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.5 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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