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2N6231 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N6231 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6229 100 2N6230 120 VCBO Collector-base voltage 2N6231 Open emitter 140 V 2N6229 100 2N6230 120 VCEO Collector-emitter voltage 2N6231 Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A PD Total power dissipation TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 0.875 ℃/W JMnic |
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