Part Name
         Description
1SS178

 HIGH SPEED SWITCHING DIODE ( 1 Page)


SYNSEMI
100% 
Zoom Out Zoom In
   
 1 page
background image
1SS178
HIGH SPEED SWITCHING DIODE
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 80 V
• Repetitive peak reverse voltage:max. 90 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.093g
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Symbol
Value
Unit
VRRM
90
V
VRM
80
V
Maximum Average Forward Current
IF
100
mA
Maximum Peak Forward Current
IFM
300
mA
Maximum Power Dissipation
PD
300
mW
Maximum Non-repetitive Peak Forward Current
IFSM
1.0
A
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Reverse Current
IR
VR = 80 V
-
-
0.5
μA
Forward Voltage
VF
IF = 100 mA
-
-
1.2
V
Capacitance between terminals
CT
-
-
3.0
pF
IF = 10 mA , VR = 6 V
RL = 50 Ω
Page 1 of 1
Rev. 01 : August 17, 2005
f = 1MHz ; VR = 0.5 V
Reverse Recovery Time
ns
4.0
-
-
Trr
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Test Condition
DO - 34 Glass
Dimensions in inches and ( millimeters )
0.078 (2.0 )max.
0.118 (3.0)
max.
0.019 (0.50)max.
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark
1 



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
RJK6014DPPSilicon N Channel MOS FET High Speed Power Switching 1 2 3 4 Renesas Technology Corp
1SS400High speed Switching Diode 1 2 3 Galaxy Semi-Conductor Holdings Limited
1SS270Silicon Epitaxial Planar Diode for High Speed Switching 1 2 3 4 5 Renesas Technology Corp
RJK0389DPASilicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 1 2 3 4 5 Renesas Technology Corp
HSB88WA_05Silicon Schottky Barrier Diode for High Speed Switching 1 2 3 4 5 Renesas Technology Corp
1SS355200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package High Speed Switching Diode 1 2 3 4 Tak Cheong Electronics (Holdings) Co.,Ltd
1N4447HIGH SPEED SWITCHING DIODE 1 2 SynSemi, Inc.
TS41480.5AMPS High Speed Switching Diode 1 2 Taiwan Semiconductor Company, Ltd
1SS270ASilicon Epitaxial Planar Diode for High Speed Switching 1 2 3 4 5 Renesas Technology Corp
HSB88WK_05Silicon Schottky Barrier Diode for High Speed Switching 1 2 3 4 5 Renesas Technology Corp

Link URL

Sponsor of Alldatasheet


Chinese Marketplace to Buy/Sell Semiconductor Electronic components on-line for Brokers and Distributors.
IC5858.com


Japanese Buy/Sell Semiconductor & Electronic components on-line marketplace for Brokers and Distributors.
ICBAIBAI.com


Korean Buy/Sell Semiconductor & Electronic components on-line marketplace for Brokers and Distributors.
ICpart.com

World wide Buy/Sell Semiconductor & Electronic components on-line marketplace for Brokers and Distributors.
IC2IC.com

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2012    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl