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2 Power Transistors 2SD1890 PC —Ta IC —VCE VBE(sat) —IC VCE(sat) —IC hFE —IC Cob —VCB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 140 20 100 60 0 40 30 10 25 35 20 5 15 (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (P C=2W) (1) (3) (4) (2) Ambient temperature Ta (˚C) 012 10 8 26 4 0 6 5 4 3 2 1 I B=3mA T C=25˚C 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA Collector to emitter voltage V CE (V) 0.1 1 10 100 0.3 3 30 0.1 100 10 1 0.3 3 30 I C/IB=1000 T C=–25˚C 100˚C 25˚C Collector current I C (A) 0.1 1 10 100 0.3 3 30 0.1 100 10 1 0.3 3 30 I C/IB=1000 T C=100˚C 25˚C –25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 10 30 100 300 1000 3000 10000 30000 100000 V CE=5V 25˚C –25˚C TC=100˚C Collector current I C (A) 1 3 10 30 100 1 1000 100 10 3 30 300 I E=0 f=1MHz T C=25˚C Collector to base voltage V CB (V) 08 26 4 0.01 0.03 0.1 0.3 1 3 10 30 100 Pulsed t w=1ms Duty cycle=1% I C/IB=1000 (IB1=–IB2) V CC=50V T C=25˚C t stg t f t on Collector current I C (A) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 Non repetitive pulse T C=25˚C I CP I C 10ms t=1ms DC Collector to emitter voltage V CE (V) |
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