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CHT4413UPNPT Datasheet(PDF) 2 Page - Chenmko Enterprise Co. Ltd. |
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CHT4413UPNPT Datasheet(HTML) 2 Page - Chenmko Enterprise Co. Ltd. |
2 / 5 page RATING CHARACTERISTIC CURVES ( CH857S ) Typical Pulsed Current Gain vs Collector Current 0.01 0 .1 1 10 100 0 100 200 300 400 500 I - COLLECTOR CURRENT (mA) C 125 C 25 °C - 40 °C V = 5V CE Collector-Emitter Saturation Voltage vs Collector Curre nt 0.1 1 10 10 0 300 0 0.05 0. 1 0.15 0. 2 0.25 0. 3 I - COLLECTOR CURRE NT (mA) C 25 °C - 40 °C 125 °C β = 10 ° TR2 CHT4403 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 2. Transistor mounted on an FR4 printed-circuit board. TR1 CHT4401 CHARACTERISTICS Tamb = 25 °C unless otherwise speciped. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -40 V VCEO collector-emitter voltage open base − -40 V VEBO emitter-base voltage open collector − -5 IC collector current (DC) − -600 mA Ptot total power dissipation Tamb ≤ 25 °C; note 2 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C V I SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICEX collector cut-off current VEB(OFF) = 0.4V ; VCE = 35 V − 100 nA IBL base cut-off current C = 150 mA; VCE = 1V IC = 500 mA; VCE = 2V IC = 500 mA; IB = 50 mA − 1200 mV VBEsat base-emitter saturation voltage hfe fT transition frequency IC = 20 mA; VCE = 10 V; f = 100 MHz 250 − MHz V(BR)CBO V(BR)CEO V(BR)EBO collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage output impedance IC = 100uA ; IE = 0A IC = 1mA ; IB = 0A IE = 100uA ; IC = 0A 60 40 6 − V − V − V I I C = 100uA; VCE = 1V 20 − IC = 1 mA; VCE = 1V 40 IC = 10 mA; VCE = 1V 80 hFE DC current gain VCEsat collector-emitter saturation IC = 150 mA; IB = 15 mA 950 mV Ccb output capacitance Ceb input capacitance hie hre voltage feedback ratio VEB(OFF) = 0.4V ; VCE = 35 V − 100 nA 100 300 40 − − − IC = 500 mA; IB = 50 mA − 750 mV IC = 150 mA; IB = 15 mA − 400 mV 750 hoe input impedance small signal current gain td delay time tr rise time ts storage time tf fall time VCB=5.0V; f=1.0MHZ; IE=0 VEB=0.5V; f=1.0MHZ; IC=0 6.5 − 20 − pF pF VCE=10V; f=1.0KHZ; IC=1.0mA 1.0 0.1 40 1.0 15 8.0 500 30 µ Ω K x10 S -4 VCC=30V; IC=150mA VBE(off)=2.0V; IB1=15mA VCC=30V; IC=150mA IB1=IB2=15mA 15 − 225 − 30 − nS nS nS nS 30 − |
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