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FG3000GX-90DA Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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FG3000GX-90DA Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Aug.1998 4.0 10 100 10 — 8 — 1.5 2500 0.013 V mA mA mA V/ µs µs A V mA °C/W On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Tj = 125 °C, ITM = 3000A, Instantaneous measurment Tj = 125 °C, VRRM Applied Tj = 125 °C, VDRM Applied, VGK = –2V Tj = 125 °C, VRG = 17V Tj = 125 °C, VD = 2250V, VGK = –2V Tj = 125 °C, ITM = 3000A, IGM = 25A, VD = 3400V Junction to fin MITSUBISHI GATE TURN-OFF THYRISTORS FG3000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Test conditions Limits Min Typ Max Unit VTM IRRM IDRM IRG dv/dt tgt IGQM VGT IGT Rth(j-f) tgq Turn-off time Tj = 125 °C, ITM = 3000A, VDM = 4500V, diGQ/dt = –40A/µs VRG = 17V, CS = 3.0 µF, LS = 0.25µH DC METHOD : VD = 24V, RL = 0.1 Ω, Tj = 25°C — —30 µs — — — — — — 720 — — — — — — — 1000 — — — — — PERFORMANCE CURVES 0 1.0 2.0 3.0 4.0 5.0 6.0 102 103 2 3 4 5 7 104 2 3 4 5 7 Tj = 125°C 100 23 5 7 101 10 5 23 44 5 7 102 15 20 25 0 0.025 0 23 10–3 5710–2 23 100 57101 23 5 710–1 23 5 7 100 0.010 0.015 0.020 0.005 103 10–1 101 102 102 7 5 3 2 100 7 5 3 2 101 7 5 3 2 7 5 3 2 103 23 5 7 23 5 7 10–1 100 23 5 7 23 5 7 VFGM = 10V VGT = 1.5V PFG(AV) = 130W IFGM = 130A Tj = 25°C PFGM = 520W IGT = 2.5A ON-STATE VOLTAGE (V) MAXIMUM ON-STATE CHARACTERISTIC CONDUCTION TIME (CYCLES AT 60Hz) RATED SURGE ON-STATE CURRENT TIME (s) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) GATE CURRENT (mA) GATE CHARACTERISTICS |
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