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ASM3I2812AF-08SR Datasheet(PDF) 4 Page - PulseCore Semiconductor |
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ASM3I2812AF-08SR Datasheet(HTML) 4 Page - PulseCore Semiconductor |
4 / 11 page ASM3P2811A/B ASM3P2812A/B November 2006 ASM3P2814A/B rev 1.5 Low Power EMI Reduction IC 4 of 11 Notice: The information in this document is subject to change without notice. DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input low voltage VSS – 0.3 - 0.8 V VIH Input high voltage - - VDD + 0.3 V IIL Input low current (Inputs D_C, SRS and FRS are pulled high internally) -60.00 - -20.00 µA IIH Input high current - - 1.00 µA IXOL XOUT Output low current (VXOL@ 0.4V, VDD = 3.3V) - - 12.00 mA IXOH XOUT Output high current (VXOH@ 2.5V, VDD = 3.3V) - - 12.00 mA VOL Output low voltage (VDD = 3.3V, IOL = 20mA) - - 0.4 V VOH Output high voltage (VDD = 3.3V, IOH = 20mA) 2.5 - - V ICC Dynamic supply current Normal mode (3.3V and 25pF loading) 7.1 @ fIN - min - 13.9 @ fIN - max mA IDD Static supply current Standby mode - 4.5 - mA VDD Operating voltage 3.0 3.3 3.6 V tON Power up time (first locked clock cycle after power up) - - 500 µS ZOUT Clock out impedance - 50 - Ω AC Electrical Characteristics Symbol Parameter Min Typ Max Unit fIN Input frequency for ASM3P2811/12/13/14 A/B 10 - 40 MHz Output frequency for ASM3P2811A/B 10 - 40 MHz Output frequency for AS3P2812A/B 20 - 80 MHz fOUT Output frequency for AS3P2814A/B 40 - 160 MHz tLH* Output rise time (measured at 0.8V to 2.0V) 0.5 - 0.96 nS tHL* Output fall time (measured at 2.0V to 0.8V) 0.78 - 1.7 nS tJC Jitter (Cycle to cycle) -200 - 200 pS TD Output duty cycle 45 50 55 % * tLH and tHL are measured into a capacitive load of 15pF |
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