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I2779AF-08-SR Datasheet(PDF) 4 Page - PulseCore Semiconductor |
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I2779AF-08-SR Datasheet(HTML) 4 Page - PulseCore Semiconductor |
4 / 8 page February 2007 P2779A rev 0.2 Low-Cost Notebook EMI Reduction IC 4 of 8 Notice: The information in this document is subject to change without notice. Absolute Maximum Ratings Symbol Parameter Rating Unit VDD, VIN Voltage on any pin with respect to Ground -0.5 to +4.6 V TSTG Storage temperature -65 to +125 °C TA Operating temperature -40 to +85 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22- A114-B) 2 KV Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect device reliability. DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input low voltage VSS - 0.3 - 0.8 V VIH Input high voltage 2.0 - VDD + 0.3 V IIL Input low current - 60 - µA IIH Input high current - 0 - µA IXOL XOUT output low current (at 0.4 V, VDD = 3.3V) - 10 - mA IXOH XOUT output high current (at 2.5 V, VDD = 3.3V) - 10 - mA VOL Output low voltage (VDD = 3.3V, IOL = 20 mA) - - 0.4 V VOH Output high voltage (VDD = 3.3V, IOH = 20 mA) 2.5 - - V IDD Static supply current - 3 - mA ICC Dynamic supply current (3.3 V, 25 pF loading, 32 MHz) - 12 - mA VDD Operating voltage 3.0 3.3 3.6 V tON Power-up time (first locked cycle after power up) - 7 - mS ZOUT Clock output impedance - 28 - Ω AC Electrical Characteristics Symbol Parameter Min Typ Max Unit fIN Input frequency 20 - 38 MHz fOUT Output frequency 20 - 38 MHz tLH 1 Output rise time (measured at 0.8 V to 2.0 V) - 1 - nS tHL 1 Output fall time (measured at 2.0 V to 0.8 V) - 1 - nS tJC Jitter (Cycle to cycle) - ±175 - pS tD Output duty cycle 45 50 55 % Note: 1. tLH and tHL are measured into a capacitive load of 15 pF |
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