BCW69LT1 BCW70LT1

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 6. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 7. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*

qVC for VCE(sat)

qVB for VBE

0.1

0.2

0.5

Figure 8. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

0.002

TA = 25°C

IC = 1.0 mA

10 mA

100 mA

Figure 9. Temperature Coefficients

50 mA

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

60

80

100

20

0

0

TA = 25°C

PULSE WIDTH = 300

µs

DUTY CYCLE

≤ 2.0%

IB = 400 µA

350

µA

300

µA

250

µA

200

µA

*APPLIES for IC/IB ≤ hFE/2

25

°C to 125°C

– 55

°C to 25°C

25

°C to 125°C

– 55

°C to 25°C

0.005 0.01 0.02 0.05 0.1 0.2

0.5

1.0 2.0

5.0 10

20

5.0

10

15

20

25

30

35

40

1.2

1.0

0.8

0.6

0.4

0.2

0

2.4

0.8

0

1.6

0.8

1.0

2.0

5.0

10

20

50

100

0.1

0.2

0.5

150

µA

100

µA

50

µA