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 MOTOROLA
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BCX70GLT1 BCX70JLT1 BCX70KLT1 3 Motorola Small–Signal Transistors, FETs and Diodes Device Data TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) Figure 3. Noise Voltage f, FREQUENCY (Hz) 5.0 7.0 10 20 3.0 Figure 4. Noise Current f, FREQUENCY (Hz) 2.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 BANDWIDTH = 1.0 Hz RS = 0 IC = 1.0 mA 100 µA 30 µA BANDWIDTH = 1.0 Hz RS ≈ ∞ 10 µA 300 µA IC = 1.0 mA 300 µA 100 µA 30 µA 10 µA 10 20 50 100 200 500 1 k 2 k 5 k 10 k NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) Figure 5. Narrow Band, 100 Hz IC, COLLECTOR CURRENT (µA) 500 k Figure 6. Narrow Band, 1.0 kHz IC, COLLECTOR CURRENT (µA) 10 2.0 dB BANDWIDTH = 1.0 Hz Figure 7. Wideband IC, COLLECTOR CURRENT (µA) 10 10 Hz to 15.7 kHz Noise Figure is defined as: NF + 20 log10 en2 ) 4KTRS ) In 2RS2 4KTRS 1 2 = Noise Voltage of the Transistor referred to the input. (Figure 3) = Noise Current of the Transistor referred to the input. (Figure 4) = Boltzman’s Constant (1.38 x 10–23 j/ °K) = Temperature of the Source Resistance ( °K) = Source Resistance (Ohms) en In K T RS 3.0 dB 4.0 dB 6.0 dB 10 dB 50 100 200 500 1 k 10 k 5 k 20 k 50 k 100 k 200 k 2 k 20 30 50 70 100 200 300 500 700 1 k 10 20 30 50 70 100 200 300 500 700 1 k 500 k 100 200 500 1 k 10 k 5 k 20 k 50 k 100 k 200 k 2 k 1 M 500 k 50 100 200 500 1 k 10 k 5 k 20 k 50 k 100 k 200 k 2 k 20 30 50 70 100 200 300 500 700 1 k BANDWIDTH = 1.0 Hz 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB |
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